Samsung First HKMG-Based 512GB DDR5 Memory

Samsung Develops Industry’s First HKMG-Based DDR5 Memory with 512GB capacity while doubling the speed of DDR4.

Samsung First HKMG-Based 512GB DDR5 Memory
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Samsung First HKMG-Based 512GB DDR5 Memory: Samsung Electronics, one of the world’s largest manufacturers of memory chips, has announced the launch of their First 512GB DDR5 Memory that is based on High-K Metal Gate (HKMG) process technology. It boasts twice the speed of performance of DDR4 at up to 7200 Mbps and is designed for high-bandwidth applications such as supercomputing, artificial intelligence, etc.

Thanks to the use of HKMG technology, which was traditionally used in logic semiconductors, Samsung’s new DDR5 module consumes approximately 13% less power while offering a boost in performance. It leverages through-silicon via (TSV) technology, stacking eight layers of 16Gb DRAM chips for a total capacity of 512GB. Samsung is currently sampling these new DDR5 modules to various customers in the data analytics, machine learning, artificial intelligence, and supercomputing space.

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Samsung introduces 512GB DDR5 module with HKMG process technology
Samsung First HKMG-Based 512GB DDR5 Memory

Commenting on the launch, Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics said: Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development. By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities, and beyond.

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